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| UNISONIC TECHNOLOGIES CO., LTD 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 Power MOSFET TO-220 1 TO-220F FEATURES * 10A, 600V, RDS(ON) =0.73@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability 1 TO-220F1 SYMBOL 2.Drain 1 TO-263 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N60L-X-TA3-T 10N60G-x-TA3-T 10N60L-x-TF1-T 10N60G-x-TF1-T 10N60L-x-TF3-T 10N60G-x-TF3-T 10N60L-x-TQ2-R 10N60G-x-TQ2-R 10N60L-x-TQ2-T 10N60G-x-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-119.E 10N60 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified) PARAMETER SYMBOL 10N60-A 10N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 10 A Continuous ID 10 A Drain Current 38 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 700 mJ Avalanche Energy Repetitive (Note 2) EAR 15.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 156 W Power Dissipation PD TO-220F/TO-220F1 50 W TO-263 178 W Junction Temperature TJ +150 C Operating Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25C 4. ISD 9.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 TO-263 SYMBOL JA JC RATING 62.5 0.8 2.5 0.7 UNIT C/W C/W C/W C/W ELECTRICAL CHARACTERISTICS( TC=25C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage 10N60-A 10N60-B SYMBOL BVDSS BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT V V A nA nA V/C V pF pF pF ns ns ns ns nC nC nC VGS = 0V, ID = 250A 600 VGS = 0V, ID = 250A 650 Drain-Source Leakage Current VDS = 600V, VGS = 0V 1 Forward VGS = 30 V, VDS = 0 V 100 Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V -100 Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 A, Referenced to 25C 0.7 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A 2.0 4.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4.75A 0.6 0.73 DYNAMIC CHARACTERISTICS Input Capacitance CISS 1570 2040 VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS 166 215 Reverse Transfer Capacitance CRSS 18 24 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 23 55 VDD=300V, ID =10A, RG =25 Turn-On Rise Time tR 69 150 (Note 1, 2) Turn-Off Delay Time tD(OFF) 144 300 Turn-Off Fall Time tF 77 165 Total Gate Charge QG 44 57 VDS=480V, ID=10A, VGS=10 V Gate-Source Charge QGS 6.7 (Note 1, 2) Gate-Drain Charge QGD 18.5 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-119.E 10N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 10A, Reverse Recovery Time tRR dIF / dt = 100 A/s (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width 300s, Duty cycle 2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 10 38 420 4.2 V A A ns C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-119.E 10N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-119.E 10N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-119.E 10N60 Capacitance, (pF) Drain-Source On-Resistance, RDS(ON) () TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD Reverse Drain Current, IDR (A) www.unisonic.com.tw Gate-Source Voltage, VCG (V) Power MOSFET QW-R502-119.E 6 of 8 10N60 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Drain-Source Breakdown Voltage, BVDSS (Normalized) Maximum Safe Operating Area 10 2 Operation in this Area is United by RDM 10s Drain Current, ID (A) 101 DC 1ms 10ms 100ms Drain Current, ID (A) 103 100s 100 Notes: 1.TC=25 2.TJ=150 3.Single Pulse 10-1 0 10 102 101 Drain-Source Voltage, VDS (V) Drain-Source On-Resistance, RDS(ON) (Normalized) Maximum Drain Current vs. Case Temperature 10 8 6 4 2 0 25 50 75 100 125 Case Temperature, TC () 150 Transient Thermal Response Curve 100 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single pulse NOTES: 1.ZJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-ZJC(t) PDW t1 t2 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration, t1 (sec) 100 101 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-119.E 10N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-119.E |
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